@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

<https://data.amerigeoss.org/dataset/77ddd51e-3f76-40ad-a5e9-4b4eb7901e44> a dcat:Dataset ;
    dct:description """
This most extensive of U.S. Army materials growth and processing
facilities houses seven dedicated, state-of-the-art, molecular beam
epitaxy and three metal organic chemical vapor deposition (MOCVD)
systems that control, at the atomic level, growth of advanced
semiconductors. Researchers design and engineer elements from
across the periodic table for use in numerous optical devices, such
as lasers and detectors, and in devices that span the
electromagnetic spectrum and electronic components, such as
field-effect transistors (FET) and thyristors.""" ;
    dct:identifier "77ddd51e-3f76-40ad-a5e9-4b4eb7901e44" ;
    dct:issued "2025-11-30T08:47:55.245133"^^xsd:dateTime ;
    dct:modified "2025-11-30T08:47:55.245137"^^xsd:dateTime ;
    dct:publisher <https://data.amerigeoss.org/organization/727dbdd5-3f98-4ac0-9d28-5e344558139b> ;
    dct:title "Advanced Materials Growth  and Processing Facility" ;
    dcat:contactPoint [ a vcard:Organization ;
            vcard:fn " " ] ;
    dcat:keyword "amerigeo",
        "amerigeoss",
        "ckan",
        "geo",
        "geoss",
        "national",
        "north-america",
        "united-states" .

<https://data.amerigeoss.org/organization/727dbdd5-3f98-4ac0-9d28-5e344558139b> a foaf:Agent ;
    foaf:name "US Migrating" .