@prefix dcat: <http://www.w3.org/ns/dcat#> .
@prefix dct: <http://purl.org/dc/terms/> .
@prefix foaf: <http://xmlns.com/foaf/0.1/> .
@prefix vcard: <http://www.w3.org/2006/vcard/ns#> .
@prefix xsd: <http://www.w3.org/2001/XMLSchema#> .

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    dct:description "The objectives of this Phase II project are to develop InGaN photovoltaic cells for high temperature and/or high radiation environments to TRL 4 and to define the development path for the technology to TRL 5 and beyond. The project will include theoretical and experimental refinement of device structures produced in the Phase I, as well as modeling and optimization of solar cell device processing. The devices will be tested under concentrated AM0 sunlight, at temperatures from 100ºC to 250ºC, and after exposure to ionizing radiation. The results are expected to further verify that InGaN can be used for high temperature / high radiation capable solar cells in NASA space missions." ;
    dct:identifier "804201df-38ed-4603-8f5e-dfebc6c95871" ;
    dct:issued "2025-11-30T12:14:26.990231"^^xsd:dateTime ;
    dct:modified "2025-11-30T12:14:26.990234"^^xsd:dateTime ;
    dct:publisher <https://data.amerigeoss.org/organization/727dbdd5-3f98-4ac0-9d28-5e344558139b> ;
    dct:title "InGaN High Temperature Photovoltaic Cells, Phase II" ;
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            vcard:hasEmail <mailto:hq-techport@mail.nasa.gov> ] ;
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    dct:title "InGaN High Temperature Photovoltaic Cells, Phase II" ;
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    dct:title "InGaN High Temperature Photovoltaic Cells, Phase II" ;
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<https://data.amerigeoss.org/dataset/804201df-38ed-4603-8f5e-dfebc6c95871/resource/b3f6e9df-51b6-4130-8840-772cca2e6b1c> a dcat:Distribution ;
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