Data for "Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric "

Included here are figures and other relevant data from the paper "Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance" published online in Nature Materials on 23 December 2019 (https://doi.org/10.1038/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies.

Data and Resources

Field Value
accessLevel public
bureauCode {006:55}
catalog_@context https://project-open-data.cio.gov/v1.1/schema/data.json
catalog_conformsTo https://project-open-data.cio.gov/v1.1/schema
catalog_describedBy https://project-open-data.cio.gov/v1.1/schema/catalog.json
identifier 7619E70B50E70FE5E05324570681A1921968
issued 2019-11-22
landingPage https://data.nist.gov/od/id/7619E70B50E70FE5E05324570681A1921968
language {en}
license https://www.nist.gov/open/license
modified 2019-11-20 00:00:00
programCode {006:045}
publisher National Institute of Standards and Technology
resource-type Dataset
source_datajson_identifier true
source_hash 563b6721a8873908f0af5ded289c9dd2a567edc2
source_schema_version 1.1
theme {Electronics:Optoelectronics,"Advanced Communications:Wireless (RF)","Physics:Condensed matter","Metrology:Electrical/electromagnetic metrology","Materials:Materials characterization",Materials:Ceramics,"Electronics:Thin-film electronics",Electronics:Electromagnetics}
Groups
  • AmeriGEOSS
  • National Provider
  • North America
Tags
  • 5g
  • amerigeo
  • amerigeoss
  • barium
  • ckan
  • density-functional-theory
  • deposition
  • dft
  • dielectric-constant
  • filters
  • frequency-agile
  • geo
  • geoss
  • loss-tangent
  • low-loss
  • materials
  • microwave
  • millimeter-wave
  • molecular-beam-epitaxy
  • national
  • north-america
  • permittivity
  • physical-vapor
  • resonators
  • ruddlesden-popper
  • strain-engineering
  • strontium
  • superlattice
  • targeted-chemical-pressure
  • titanate
  • tunability
  • united-states
isopen False
license_id other-license-specified
license_title other-license-specified
maintainer Eric Marksz
maintainer_email eric.marksz@nist.gov
metadata_created 2025-11-21T08:33:03.043086
metadata_modified 2025-11-21T08:33:03.043090
notes Included here are figures and other relevant data from the paper "Targeted Chemical Pressure Yields Tunable Millimeter-Wave 5G Dielectric with Unparalleled Performance" published online in Nature Materials on 23 December 2019 (https://doi.org/10.1038/s41563-019-0564-4). Abstract: Epitaxial strain can unlock enhanced properties in oxide materials but restricts substrate choice and maximum film thickness, above which lattice relaxation and property degradation occur. Here we employ a chemical alternative to epitaxial strain by providing targeted chemical pressure, distinct from random doping, to induce a ferroelectric instability with the strategic introduction of barium into today's best millimeter-wave tunable dielectric, the epitaxially strained 50 nm thick n = 6 (SrTiO3)nSrO Ruddlesden-Popper grown on (110) DyScO3. The defect mitigating nature of (SrTiO3)nSrO results in unprecedented low loss at frequencies up to 125 GHz. No barium-containing Ruddlesden-Popper titanates are known, but this atomically-engineered superlattice material, (SrTiO3)n?m(BaTiO3)mSrO, enables low-loss, tunable dielectric properties to be achieved with lower epitaxial strain and a 200 % improvement in the figure of merit at commercially-relevant millimeter-wave frequencies. As tunable dielectrics are key constituents for emerging millimeter-wave high-frequency devices in telecommunications our findings could lead to higher performance adaptive and reconfigurable electronics at these frequencies.
num_resources 13
num_tags 32
title Data for "Targeted Chemical Pressure Yields Tunable Millimeter-Wave Dielectric "