Extended Wavelength InP Based Avalanche Diodes for MWIR Response, Phase I

For this NASA STTR program, we propose to develop a novel superlattice-based near infrared to midwave infrared avalanche photodetector (APD) grown on InP substrates for single photon counting applications at high operating temperatures on the order of 200K accessible using thermoelectric coolers. This enables a detector with broad spectral response spanning 0.9 to 4 μm wavelength with reduced cooling requirements, offering a reliable detector technology with small size weight and power requirements that is ideal for future planetary missions. The detector is based on Princeton Lightwave's industry-leading planar-geometry single photon counting APD detector platform designed for 1.55 μm wavelengths, with incorporation of a novel absorber region.

Data and Resources

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identifier TECHPORT_10390
issued 2012-02-01
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metadata_created 2025-11-22T23:10:45.730855
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notes For this NASA STTR program, we propose to develop a novel superlattice-based near infrared to midwave infrared avalanche photodetector (APD) grown on InP substrates for single photon counting applications at high operating temperatures on the order of 200K accessible using thermoelectric coolers. This enables a detector with broad spectral response spanning 0.9 to 4 μm wavelength with reduced cooling requirements, offering a reliable detector technology with small size weight and power requirements that is ideal for future planetary missions. The detector is based on Princeton Lightwave's industry-leading planar-geometry single photon counting APD detector platform designed for 1.55 μm wavelengths, with incorporation of a novel absorber region.
num_resources 4
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title Extended Wavelength InP Based Avalanche Diodes for MWIR Response, Phase I