Ion Beam Laboratory
Data and Resources
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Web PageHTML
ion_beam_laboratory.html
| Field | Value |
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| isopen | False |
| license_id | notspecified |
| license_title | License not specified |
| maintainer | Jonathan Custer |
| maintainer_email | jscuste@sandia.gov |
| metadata_created | 2025-12-02T09:14:33.279229 |
| metadata_modified | 2025-12-02T09:14:33.279233 |
| notes | Sandia's Ion Beam Analysis (IBA) program is recognized as one of the best in the world. It has the ability to examine a wide spectrum of materials, from semiconductors to metals and ceramics. Some of the accomplishments of the program include:Invented several new ion beam analysis techniques for the quantitative analysis of light elements (H through F), and heavy elements (C through Pu).Enhanced nuclear microprobe-based Single Event Upset (SEU) imaging system to supply submicron images of charge generation and collection in CMOS ICs. This new application of SEU-imaging is important for understanding and decreasing upset susceptibility.This facility is available to support any based firm that has applications that can benefit from its unique capabilities. To make arrangements to use the Ion Beam Laboratory, contact the user liaison or visit the IBA Table of Elements siteto quickly retrieve information on the sensitivity, depth of analysis and depth resolution of most of the modern ion beam analysis techniques. |
| num_resources | 1 |
| num_tags | 8 |
| title | Ion Beam Laboratory |