Monolithically integrated AlN/GaN electronics for harsh environments, Phase I

Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a number of III-V systems in order to improve operational speed. The main goal of this program is to develop wide temperature-operable radiation hard monolithically-integrated electronics based on wide bandgap III-nitride epitaxial structures.

Data and Resources

Field Value
Groups
  • AmeriGEOSS
  • National Provider
  • North America
Tags
  • amerigeo
  • amerigeoss
  • ckan
  • geo
  • geoss
  • national
  • north-america
  • united-states
isopen False
license_id us-pd
license_title us-pd
maintainer TECHPORT SUPPORT
maintainer_email hq-techport@mail.nasa.gov
metadata_created 2025-12-02T08:17:01.034927
metadata_modified 2025-12-02T08:17:01.034931
notes Recently, resonant-tunneling-diode (RTD) based circuits employing monolithically-integrated RTD on high electron mobility (HEMT) structures have been developed in a number of III-V systems in order to improve operational speed. The main goal of this program is to develop wide temperature-operable radiation hard monolithically-integrated electronics based on wide bandgap III-nitride epitaxial structures.
num_resources 4
num_tags 8
title Monolithically integrated AlN/GaN electronics for harsh environments, Phase I