SiC Diode Test Data
Data and Resources
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SiC Diode Test Data.xlsxXLS
Excel Spreadsheet containing data from SiC diode test (IV curves)
| Field | Value |
|---|---|
| DOI | 10.15121/1157514 |
| accessLevel | public |
| bureauCode | {019:20} |
| catalog_@context | https://openei.org/data.json |
| catalog_@id | https://openei.org/data.json |
| catalog_conformsTo | https://project-open-data.cio.gov/v1.1/schema |
| catalog_describedBy | https://project-open-data.cio.gov/v1.1/schema/catalog.json |
| dataQuality | true |
| identifier | https://data.openei.org/submissions/3257 |
| issued | 2014-08-01T06:00:00Z |
| landingPage | https://gdr.openei.org/submissions/441 |
| license | https://creativecommons.org/licenses/by/4.0/ |
| modified | 2017-08-08T22:12:40Z |
| old-spatial | {"type":"Polygon","coordinates":[[[-123.25410625,35.586078228934],[-119.39800625,35.586078228934],[-119.39800625,39.702331271134],[-123.25410625,39.702331271134],[-123.25410625,35.586078228934]]]} |
| programCode | {019:006} |
| projectLead | Lauren Boyd |
| projectNumber | FY14 AOP 1.1.5.1 |
| publisher | Sandia National Laboratories |
| resource-type | Dataset |
| source_datajson_identifier | true |
| source_hash | a021a8cacb110e02abd374048b385aaf795f570b |
| source_schema_version | 1.1 |
| spatial | {"type":"Polygon","coordinates":[[[-123.25410625,35.586078228934],[-119.39800625,35.586078228934],[-119.39800625,39.702331271134],[-123.25410625,39.702331271134],[-123.25410625,35.586078228934]]]} |
| Groups |
|
| Tags |
|
| isopen | True |
| license_id | cc-by |
| license_title | Creative Commons Attribution |
| license_url | http://www.opendefinition.org/licenses/cc-by |
| maintainer | Gregorz Gilbert Cieslewski |
| maintainer_email | ggciesl@sandia.gov |
| metadata_created | 2025-11-20T20:26:42.421335 |
| metadata_modified | 2025-11-20T20:26:42.421339 |
| notes | Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C. |
| num_resources | 1 |
| num_tags | 14 |
| title | SiC Diode Test Data |