SiC Diode Test Data

Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.

Data and Resources

Field Value
DOI 10.15121/1157514
accessLevel public
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identifier https://data.openei.org/submissions/3257
issued 2014-08-01T06:00:00Z
landingPage https://gdr.openei.org/submissions/441
license https://creativecommons.org/licenses/by/4.0/
modified 2017-08-08T22:12:40Z
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programCode {019:006}
projectLead Lauren Boyd
projectNumber FY14 AOP 1.1.5.1
publisher Sandia National Laboratories
resource-type Dataset
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Groups
  • AmeriGEOSS
  • National Provider
  • North America
Tags
  • amerigeo
  • amerigeoss
  • ckan
  • diode
  • egs
  • geo
  • geoss
  • geothermal
  • high-temp
  • national
  • north-america
  • sic
  • test
  • united-states
isopen True
license_id cc-by
license_title Creative Commons Attribution
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maintainer Gregorz Gilbert Cieslewski
maintainer_email ggciesl@sandia.gov
metadata_created 2025-11-20T20:26:42.421335
metadata_modified 2025-11-20T20:26:42.421339
notes Fabricated SiC diodes are tested in the temperature range of 300 degrees C to 600 degrees C.
num_resources 1
num_tags 14
title SiC Diode Test Data