Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters, Phase II

In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of Hall Effect thrusters. This program specifically targets the design of a PPU for the HiVHAC (High Voltage Hall ACcelerator) thruster, with target specifications of 80-160V input, 200-700V / 5A output, efficiency greater than 96%, and peak power density in excess of 2.5 kW/kg. The PPU under development utilizes SiC JFET power switches; components which APEI, Inc. has irradiated under TID conditions to greater than 3 MRad with little to zero change in device performance.

Data and Resources

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identifier TECHPORT_8990
issued 2013-08-01
landingPage https://techport.nasa.gov/view/8990
modified 2020-01-29
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metadata_created 2025-11-19T22:20:17.219989
metadata_modified 2025-11-19T22:20:17.219994
notes In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of Hall Effect thrusters. This program specifically targets the design of a PPU for the HiVHAC (High Voltage Hall ACcelerator) thruster, with target specifications of 80-160V input, 200-700V / 5A output, efficiency greater than 96%, and peak power density in excess of 2.5 kW/kg. The PPU under development utilizes SiC JFET power switches; components which APEI, Inc. has irradiated under TID conditions to greater than 3 MRad with little to zero change in device performance.
num_resources 4
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title Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters, Phase II