Ultra High-Speed Imaging

Goal 1: Discrete diodes - State-of-the-art: P-type dopant (boron) creates >500nm dead layer near surface; Pixels sensitive to x-rays above ~1KeV; Superlattice doping Superlattice < 5nm thick, enables nearly 100% charge collection efficiency; Pixels sensitive to entire X-ray spectrum. Goal 2: Hybridized CMOS Imagers - State-of-the-art: Sandia is developing ultrahigh speed detectors using DBI bonding for back-illumination Superlattice doping; Integrate JPL’s superlattice doping processes with Sandia’s DBI-bonded imaging arrays. Demonstrate stable surface passivation with improved sensitivity to low energy X-rays and electron.

Data and Resources

Field Value
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identifier TECHPORT_91759
issued 2016-09-01
landingPage https://techport.nasa.gov/view/91759
modified 2020-01-29
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  • national
  • north-america
  • united-states
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maintainer_email hq-techport@mail.nasa.gov
metadata_created 2025-11-22T06:07:15.388407
metadata_modified 2025-11-22T06:07:15.388411
notes Goal 1: Discrete diodes - State-of-the-art: P-type dopant (boron) creates >500nm dead layer near surface; Pixels sensitive to x-rays above ~1KeV; Superlattice doping Superlattice < 5nm thick, enables nearly 100% charge collection efficiency; Pixels sensitive to entire X-ray spectrum. Goal 2: Hybridized CMOS Imagers - State-of-the-art: Sandia is developing ultrahigh speed detectors using DBI bonding for back-illumination Superlattice doping; Integrate JPL’s superlattice doping processes with Sandia’s DBI-bonded imaging arrays. Demonstrate stable surface passivation with improved sensitivity to low energy X-rays and electron.
num_resources 4
num_tags 10
title Ultra High-Speed Imaging