Compact 2050 nm Semiconductor Diode Laser Master Oscillator, Phase I

This Phase I effort seeks to develop DFB laser master oscillators at the novel wavelength of 12050 nm. Two prototypes will be built, tested, and delivered . Currently, DFB laser chips are not available COTS at this wavelength. However, EM4 has identified a stock of devices that may be used for initial proof-of-concept testing. Due to the very large size of optical isolators at this wavelength, an isolator will not be included in the package.

Data and Resources

Field Value
accessLevel public
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identifier TECHPORT_9021
issued 2010-07-01
landingPage https://techport.nasa.gov/view/9021
modified 2020-01-29
programCode {026:027}
publisher Space Technology Mission Directorate
resource-type Dataset
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Groups
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  • National Provider
  • North America
Tags
  • amerigeo
  • amerigeoss
  • ckan
  • completed
  • geo
  • geoss
  • langley-research-center
  • national
  • north-america
  • united-states
isopen False
license_id notspecified
license_title License not specified
maintainer TECHPORT SUPPORT
maintainer_email hq-techport@mail.nasa.gov
metadata_created 2025-11-22T23:24:26.955976
metadata_modified 2025-11-22T23:24:26.955980
notes This Phase I effort seeks to develop DFB laser master oscillators at the novel wavelength of 12050 nm. Two prototypes will be built, tested, and delivered . Currently, DFB laser chips are not available COTS at this wavelength. However, EM4 has identified a stock of devices that may be used for initial proof-of-concept testing. Due to the very large size of optical isolators at this wavelength, an isolator will not be included in the package.
num_resources 4
num_tags 10
title Compact 2050 nm Semiconductor Diode Laser Master Oscillator, Phase I