Prognostics of Power MOSFET

This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs. The failure mechanism for the stress conditions is determined to be die-attachment degradation. Change in ON-state resistance is used as a precursor of failure due to its dependence on junction temperature. The experimental data is augmented with a finite element analysis simulation that is based on a two-transistor model. The simulation assists in the interpretation of the degradation phenomena and SOA (safe operation area) change.

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  • National Provider
  • North America
Tags
  • amerigeo
  • amerigeoss
  • ckan
  • geo
  • geoss
  • national
  • north-america
  • united-states
isopen False
license_id us-pd
license_title us-pd
maintainer Miryam Strautkalns
maintainer_email miryam.strautkalns@nasa.gov
metadata_created 2025-12-02T10:40:45.057669
metadata_modified 2025-12-02T10:40:45.057673
notes This paper demonstrates how to apply prognostics to power MOSFETs (metal oxide field effect transistor). The methodology uses thermal cycling to age devices and Gaussian process regression to perform prognostics. The approach is validated with experiments on 100V power MOSFETs. The failure mechanism for the stress conditions is determined to be die-attachment degradation. Change in ON-state resistance is used as a precursor of failure due to its dependence on junction temperature. The experimental data is augmented with a finite element analysis simulation that is based on a two-transistor model. The simulation assists in the interpretation of the degradation phenomena and SOA (safe operation area) change.
num_resources 1
num_tags 8
title Prognostics of Power MOSFET