Reliable Direct Bond Copper Ceramic Packages for High Temperature Power Electronics, Phase I
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| Field | Value |
|---|---|
| Groups |
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| Tags |
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| isopen | False |
| license_id | us-pd |
| license_title | us-pd |
| maintainer | TECHPORT SUPPORT |
| maintainer_email | hq-techport@mail.nasa.gov |
| metadata_created | 2025-12-02T09:57:16.458003 |
| metadata_modified | 2025-12-02T09:57:16.458007 |
| notes | The proposed program will develop highly reliable, hermetic, Si3N4 ceramic multichip modules to integrate commercially available SiC power devices to build power electronic modules for reliable operation above 500ºC in extreme environments of space exploration. The Phase I program will demonstrate a reliable direct bond copper (DBC) process for Si3N4 substrates, develop high current carrying hermetic feedthroughs, an innovative transient liquid phase (TLP) die attach, and a monometallic wire bonding capable of reliable operation above 500ºC; and fabricate and test a hermetic single-chip module. |
| num_resources | 4 |
| num_tags | 8 |
| title | Reliable Direct Bond Copper Ceramic Packages for High Temperature Power Electronics, Phase I |